Dual N/P-Channel-Channel MOSFET, 2.6 A, 4.7 A, 60 V, 8-Pin SOIC Diodes Inc ZXMC4559DN8TA
- RS Stock No.:
- 122-3286
- Mfr. Part No.:
- ZXMC4559DN8TA
- Manufacturer:
- DiodesZetex
Subtotal (1 reel of 500 units)**
PHP18,644.50
(exc. VAT)
PHP20,882.00
(inc. VAT)
Temporarily out of stock - back order for despatch 03/04/2025, delivery within 10 working days from desptach date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Reel** |
---|---|---|
500 + | PHP37.289 | PHP18,644.50 |
**price indicative
- RS Stock No.:
- 122-3286
- Mfr. Part No.:
- ZXMC4559DN8TA
- Manufacturer:
- DiodesZetex
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | DiodesZetex | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 2.6 A, 4.7 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 75 mΩ, 125 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2.1 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 3.95mm | |
Number of Elements per Chip | 2 | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 20.4 nC @ 10 V, 24.2 nC @ 10 V | |
Length | 4.95mm | |
Maximum Operating Temperature | +150 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 1.5mm | |
Select all | ||
---|---|---|
Manufacturer DiodesZetex | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 2.6 A, 4.7 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 75 mΩ, 125 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.1 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 3.95mm | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 20.4 nC @ 10 V, 24.2 nC @ 10 V | ||
Length 4.95mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
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