Vishay SQ Rugged Type P-Channel MOSFET, 11 A, 60 V Enhancement, 3-Pin TO-252 SQD19P06-60L_GE3

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Subtotal (1 pack of 10 units)*

PHP744.80

(exc. VAT)

PHP834.20

(inc. VAT)

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  • 160 unit(s) ready to ship from another location
  • Plus 9,970 unit(s) shipping from January 02, 2026
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Units
Per Unit
Per Pack*
10 - 10PHP74.48PHP744.80
20 - 40PHP62.053PHP620.53
50 - 90PHP57.793PHP577.93
100 - 190PHP57.648PHP576.48
200 +PHP54.395PHP543.95

*price indicative

Packaging Options:
RS Stock No.:
819-3936
Mfr. Part No.:
SQD19P06-60L_GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

SQ Rugged

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

27nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.5V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

46W

Maximum Operating Temperature

175°C

Width

6.22 mm

Standards/Approvals

No

Length

6.73mm

Height

2.38mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
TW

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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