Vishay SQ Rugged Type P-Channel MOSFET, 6.2 A, 30 V Enhancement, 8-Pin SOIC SQ4431EY-T1_GE3

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Subtotal (1 pack of 20 units)*

PHP838.88

(exc. VAT)

PHP939.54

(inc. VAT)

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  • 2,420 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
20 - 20PHP41.944PHP838.88
40 - 80PHP39.917PHP798.34
100 - 180PHP39.513PHP790.26
200 - 380PHP39.107PHP782.14
400 +PHP38.702PHP774.04

*price indicative

Packaging Options:
RS Stock No.:
819-3920
Mfr. Part No.:
SQ4431EY-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

6.2A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

SQ Rugged

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

25nC

Maximum Power Dissipation Pd

6W

Forward Voltage Vf

-1.1V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

5mm

Height

1.55mm

Width

4 mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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