Vishay SQ Rugged Type P-Channel MOSFET, 17 A, 40 V Enhancement, 8-Pin SOIC SQ4401EY-T1_GE3
- RS Stock No.:
- 819-3917
- Mfr. Part No.:
- SQ4401EY-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
PHP1,539.00
(exc. VAT)
PHP1,723.70
(inc. VAT)
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP153.90 | PHP1,539.00 |
| 20 - 90 | PHP148.406 | PHP1,484.06 |
| 100 - 190 | PHP142.899 | PHP1,428.99 |
| 200 - 390 | PHP137.404 | PHP1,374.04 |
| 400 + | PHP131.902 | PHP1,319.02 |
*price indicative
- RS Stock No.:
- 819-3917
- Mfr. Part No.:
- SQ4401EY-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOIC | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 7.14W | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Height | 1.55mm | |
| Standards/Approvals | No | |
| Width | 4mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOIC | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 7.14W | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Height 1.55mm | ||
Standards/Approvals No | ||
Width 4mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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