Vishay Si9407BDY Type P-Channel TrenchFET Power MOSFET, 4.7 A, 60 V Enhancement, 8-Pin SOIC SI9407BDY-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 20 units)*

PHP1,026.00

(exc. VAT)

PHP1,149.20

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 1,320 unit(s), ready to ship from another location
Units
Per Unit
Per Pack*
20 - 20PHP51.30PHP1,026.00
40 - 80PHP50.018PHP1,000.36
100 - 180PHP48.767PHP975.34
200 - 380PHP47.548PHP950.96
400 +PHP46.359PHP927.18

*price indicative

Packaging Options:
RS Stock No.:
818-1444
Mfr. Part No.:
SI9407BDY-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type P

Product Type

TrenchFET Power MOSFET

Maximum Continuous Drain Current Id

4.7A

Maximum Drain Source Voltage Vds

60V

Series

Si9407BDY

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.12Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

5W

Typical Gate Charge Qg @ Vgs

8nC

Forward Voltage Vf

-0.8V

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Length

5mm

Height

1.55mm

Width

4 mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links