Vishay TrenchFET Type P-Channel MOSFET, 50 A, 30 V Enhancement, 8-Pin PowerPAK SO-8 SI7149ADP-T1-GE3
- RS Stock No.:
- 818-1393
- Mfr. Part No.:
- SI7149ADP-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP689.92
(exc. VAT)
PHP772.72
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 60 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP34.496 | PHP689.92 |
| 40 - 80 | PHP33.461 | PHP669.22 |
| 100 - 180 | PHP32.458 | PHP649.16 |
| 200 - 380 | PHP31.484 | PHP629.68 |
| 400 + | PHP30.54 | PHP610.80 |
*price indicative
- RS Stock No.:
- 818-1393
- Mfr. Part No.:
- SI7149ADP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0052Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 43.1nC | |
| Forward Voltage Vf | 0.74V | |
| Maximum Power Dissipation Pd | 48W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5 mm | |
| Length | 5.99mm | |
| Standards/Approvals | Lead (Pb)-Free | |
| Height | 1.07mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0052Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 43.1nC | ||
Forward Voltage Vf 0.74V | ||
Maximum Power Dissipation Pd 48W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Width 5 mm | ||
Length 5.99mm | ||
Standards/Approvals Lead (Pb)-Free | ||
Height 1.07mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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