Vishay SiHF630S Type N-Channel MOSFET, 9 A, 200 V Enhancement, 3-Pin TO-263 SIHF630STRL-GE3

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Subtotal (1 pack of 10 units)*

PHP909.03

(exc. VAT)

PHP1,018.11

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 10PHP90.903PHP909.03
20 - 90PHP88.974PHP889.74
100 - 190PHP87.728PHP877.28
200 - 390PHP83.656PHP836.56
400 +PHP80.017PHP800.17

*price indicative

Packaging Options:
RS Stock No.:
815-2623
Mfr. Part No.:
SIHF630STRL-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-263

Series

SiHF630S

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

400mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

43nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

74W

Forward Voltage Vf

2V

Maximum Operating Temperature

150°C

Width

9.65 mm

Length

10.67mm

Standards/Approvals

No

Height

4.83mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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