IXYS Type N-Channel MOSFET, 10 A, 1 kV Enhancement, 3-Pin ISOPLUS247 IXFR15N100Q3
- RS Stock No.:
- 801-1430
- Distrelec Article No.:
- 302-53-393
- Mfr. Part No.:
- IXFR15N100Q3
- Manufacturer:
- IXYS
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Subtotal (1 unit)*
PHP1,155.56
(exc. VAT)
PHP1,294.23
(inc. VAT)
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In Stock
- 54 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP1,155.56 |
| 10 - 49 | PHP1,138.79 |
| 50 - 99 | PHP1,079.69 |
| 100 - 249 | PHP1,042.77 |
| 250 + | PHP1,021.80 |
*price indicative
- RS Stock No.:
- 801-1430
- Distrelec Article No.:
- 302-53-393
- Mfr. Part No.:
- IXFR15N100Q3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | ISOPLUS247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 400W | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.34mm | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Width | 5.21 mm | |
| Distrelec Product Id | 30253393 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type ISOPLUS247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 400W | ||
Maximum Operating Temperature 150°C | ||
Height 21.34mm | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Width 5.21 mm | ||
Distrelec Product Id 30253393 | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
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- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin PLUS247
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- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-264 IXFK32N100Q3