IXYS HiperFET, Q3-Class Type N-Channel MOSFET, 45 A, 500 V Enhancement, 3-Pin ISOPLUS247
- RS Stock No.:
- 920-0971
- Mfr. Part No.:
- IXFR64N50Q3
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 30 units)*
PHP56,511.18
(exc. VAT)
PHP63,292.53
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 300 unit(s) shipping from December 09, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 30 | PHP1,883.706 | PHP56,511.18 |
| 60 - 90 | PHP1,827.195 | PHP54,815.85 |
| 120 - 270 | PHP1,772.379 | PHP53,171.37 |
| 300 - 570 | PHP1,719.208 | PHP51,576.24 |
| 600 + | PHP1,667.632 | PHP50,028.96 |
*price indicative
- RS Stock No.:
- 920-0971
- Mfr. Part No.:
- IXFR64N50Q3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | ISOPLUS247 | |
| Series | HiperFET, Q3-Class | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 94mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500W | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 21.34mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type ISOPLUS247 | ||
Series HiperFET, Q3-Class | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 94mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500W | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 21.34mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS HiperFET 45 A 3-Pin ISOPLUS247 IXFR64N50Q3
- IXYS HiperFET 18 A 3-Pin ISOPLUS247
- IXYS HiperFET 10 A 3-Pin ISOPLUS247
- IXYS HiperFET 10 A 3-Pin ISOPLUS247 IXFR15N100Q3
- IXYS HiperFET 18 A 3-Pin ISOPLUS247 IXFR24N100Q3
- IXYS Q3-Class Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin ISOPLUS247 IXFR48N60Q3
- IXYS HiperFET 64 A 3-Pin PLUS247
- IXYS HiperFET 32 A 3-Pin PLUS247