IXYS Type N-Channel MOSFET, 18 A, 1 kV Enhancement, 3-Pin ISOPLUS247 IXFR24N100Q3
- RS Stock No.:
- 801-1433
- Distrelec Article No.:
- 302-53-394
- Mfr. Part No.:
- IXFR24N100Q3
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP2,540.98
(exc. VAT)
PHP2,845.90
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 12 unit(s) shipping from July 08, 2026
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP2,540.98 |
| 10 - 19 | PHP2,516.00 |
| 20 - 49 | PHP2,118.10 |
| 50 - 249 | PHP2,097.23 |
| 250 + | PHP2,075.64 |
*price indicative
- RS Stock No.:
- 801-1433
- Distrelec Article No.:
- 302-53-394
- Mfr. Part No.:
- IXFR24N100Q3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | ISOPLUS247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 490mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Maximum Power Dissipation Pd | 500W | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Height | 21.34mm | |
| Width | 5.21 mm | |
| Distrelec Product Id | 30253394 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type ISOPLUS247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 490mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Maximum Power Dissipation Pd 500W | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Height 21.34mm | ||
Width 5.21 mm | ||
Distrelec Product Id 30253394 | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
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- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-247 IXFH18N100Q3
- IXYS Type N-Channel MOSFET 800 V Enhancement, 3-Pin ISOPLUS247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin ISOPLUS247
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