IXYS Type N-Channel MOSFET, 30 A, 500 V Enhancement, 3-Pin TO-247 IXFH30N50Q3
- RS Stock No.:
- 801-1386
- Distrelec Article No.:
- 302-53-319
- Mfr. Part No.:
- IXFH30N50Q3
- Manufacturer:
- IXYS
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Subtotal (1 unit)*
PHP838.15
(exc. VAT)
PHP938.73
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 282 unit(s) ready to ship from another location
- Plus 258 unit(s) shipping from January 02, 2026
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP838.15 |
| 10 - 49 | PHP817.20 |
| 50 - 99 | PHP796.77 |
| 100 - 249 | PHP776.87 |
| 250 + | PHP757.46 |
*price indicative
- RS Stock No.:
- 801-1386
- Distrelec Article No.:
- 302-53-319
- Mfr. Part No.:
- IXFH30N50Q3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 690W | |
| Typical Gate Charge Qg @ Vgs | 62nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.3 mm | |
| Length | 16.26mm | |
| Height | 16.26mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253319 | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 690W | ||
Typical Gate Charge Qg @ Vgs 62nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Width 5.3 mm | ||
Length 16.26mm | ||
Height 16.26mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 30253319 | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
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