IXYS HiperFET, Q3-Class Type N-Channel MOSFET, 30 A, 500 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 920-0965
- Mfr. Part No.:
- IXFH30N50Q3
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 30 units)*
PHP25,071.36
(exc. VAT)
PHP28,079.91
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 240 unit(s) shipping from June 08, 2026
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Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 30 | PHP835.712 | PHP25,071.36 |
| 60 - 90 | PHP810.64 | PHP24,319.20 |
| 120 - 270 | PHP786.322 | PHP23,589.66 |
| 300 - 570 | PHP762.731 | PHP22,881.93 |
| 600 + | PHP739.849 | PHP22,195.47 |
*price indicative
- RS Stock No.:
- 920-0965
- Mfr. Part No.:
- IXFH30N50Q3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-247 | |
| Series | HiperFET, Q3-Class | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 690W | |
| Typical Gate Charge Qg @ Vgs | 62nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.26mm | |
| Standards/Approvals | No | |
| Height | 16.26mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-247 | ||
Series HiperFET, Q3-Class | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 690W | ||
Typical Gate Charge Qg @ Vgs 62nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Length 16.26mm | ||
Standards/Approvals No | ||
Height 16.26mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS HiperFET 30 A 3-Pin TO-247 IXFH30N50Q3
- IXYS HiperFET 70 A 3-Pin TO-247
- IXYS HiperFET 50 A 3-Pin TO-247
- IXYS HiperFET 18 A 3-Pin TO-247
- IXYS HiperFET 70 A 3-Pin TO-247 IXFH70N20Q3
- IXYS HiperFET 50 A 3-Pin TO-247 IXFH50N60P3
- IXYS HiperFET 18 A 3-Pin TO-247 IXFH18N100Q3
- IXYS HiperFET 18 A 3-Pin ISOPLUS247