IXYS Type N-Channel MOSFET, 30 A, 500 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 920-0965
- Mfr. Part No.:
- IXFH30N50Q3
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 30 units)*
PHP25,071.36
(exc. VAT)
PHP28,079.91
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 240 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 30 | PHP835.712 | PHP25,071.36 |
| 60 - 90 | PHP810.64 | PHP24,319.20 |
| 120 - 270 | PHP786.322 | PHP23,589.66 |
| 300 - 570 | PHP762.731 | PHP22,881.93 |
| 600 + | PHP739.849 | PHP22,195.47 |
*price indicative
- RS Stock No.:
- 920-0965
- Mfr. Part No.:
- IXFH30N50Q3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 62nC | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 690W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 16.26mm | |
| Length | 16.26mm | |
| Width | 5.3 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 62nC | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 690W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 16.26mm | ||
Length 16.26mm | ||
Width 5.3 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247 IXFH30N50Q3
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247 IXFH60N50P3