IXYS Type N-Channel MOSFET, 50 A, 600 V Enhancement, 3-Pin TO-247 IXFH50N60P3
- RS Stock No.:
- 802-4388
- Mfr. Part No.:
- IXFH50N60P3
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP610.37
(exc. VAT)
PHP683.61
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- 6 left, ready to ship from another location
- Final 7 unit(s) shipping from January 02, 2026
Units | Per Unit |
|---|---|
| 1 - 9 | PHP610.37 |
| 10 - 49 | PHP592.05 |
| 50 - 99 | PHP574.31 |
| 100 - 249 | PHP557.08 |
| 250 + | PHP540.36 |
*price indicative
- RS Stock No.:
- 802-4388
- Mfr. Part No.:
- IXFH50N60P3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 145mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 1.04kW | |
| Typical Gate Charge Qg @ Vgs | 94nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 16.26mm | |
| Height | 21.46mm | |
| Width | 5.3 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 145mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 1.04kW | ||
Typical Gate Charge Qg @ Vgs 94nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 16.26mm | ||
Height 21.46mm | ||
Width 5.3 mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
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