N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220SIS Toshiba TK31A60W,S4VX(M

RS Stock No.:: 799-5081
Mfr. Part No.:: TK31A60W,S4VX(M
Manufacturer:: Toshiba

N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220SIS Toshiba TK31A60W,S4VX(M

Bulk discount available

Price Each (In a Pack of 2)

PHP248.76

(exc. VAT)

PHP278.61

(inc. VAT)

Temporarily out of stock - back order for despatch 10/10/2024, delivery within 10 working days from desptach date

Units	Per Unit	Per Pack*
2 - 8	PHP248.76	PHP497.52
10 - 48	PHP241.295	PHP482.59
50 - 98	PHP234.05	PHP468.10
100 - 198	PHP228.86	PHP457.72
200 +	PHP223.88	PHP447.76
*price indicative

RS Stock No.:: 799-5081
Mfr. Part No.:: TK31A60W,S4VX(M
Manufacturer:: Toshiba

TK31A60W_E
TK31A60W, MOSFET Silicon N-Channel MOS (DTMOS IV)
TK31A60W N-Channel MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	31 A
Maximum Drain Source Voltage	600 V
Package Type	TO-220SIS
Series	DTMOSIV
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	88 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	45 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	86 nC @ 10 V
Number of Elements per Chip	1
Width	4.5mm
Maximum Operating Temperature	+150 °C
Length	10mm
Transistor Material	Si
Height	15mm

N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220SIS Toshiba TK31A60W,S4VX(M

MOSFET N-Channel, TK3x Series, Toshiba