Toshiba DTMOSIV Type N-Channel MOSFET, 30.8 A, 600 V Enhancement, 3-Pin TO-220 TK31E60X,S1X(S

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Subtotal (1 pack of 2 units)*

PHP484.84

(exc. VAT)

PHP543.02

(inc. VAT)

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  • 4 unit(s) ready to ship from another location
  • Plus 24 unit(s) shipping from January 01, 2026
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Units
Per Unit
Per Pack*
2 - 8PHP242.42PHP484.84
10 - 18PHP235.15PHP470.30
20 - 48PHP228.09PHP456.18
50 - 98PHP221.25PHP442.50
100 +PHP214.615PHP429.23

*price indicative

RS Stock No.:
125-0563
Mfr. Part No.:
TK31E60X,S1X(S
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30.8A

Maximum Drain Source Voltage Vds

600V

Series

DTMOSIV

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

88mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.7V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

230W

Typical Gate Charge Qg @ Vgs

65nC

Maximum Operating Temperature

150°C

Height

15.1mm

Width

4.45 mm

Length

10.16mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
JP

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