Toshiba DTMOSIV Type N-Channel MOSFET, 27.6 A, 650 V Enhancement, 3-Pin TO-220 TK28E65W,S1X(S

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Subtotal (1 pack of 2 units)*

PHP481.87

(exc. VAT)

PHP539.694

(inc. VAT)

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In Stock
  • 12 unit(s) ready to ship from another location
  • Plus 4 unit(s) shipping from January 01, 2026
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Units
Per Unit
Per Pack*
2 - 8PHP240.935PHP481.87
10 - 18PHP224.215PHP448.43
20 - 48PHP209.89PHP419.78
50 - 98PHP197.71PHP395.42
100 +PHP187.12PHP374.24

*price indicative

RS Stock No.:
125-0560
Mfr. Part No.:
TK28E65W,S1X(S
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

27.6A

Maximum Drain Source Voltage Vds

650V

Series

DTMOSIV

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

75nC

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

-1.7V

Maximum Power Dissipation Pd

230W

Maximum Operating Temperature

150°C

Height

15.1mm

Width

4.45 mm

Standards/Approvals

No

Length

10.16mm

Automotive Standard

No

COO (Country of Origin):
JP

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