Toshiba DTMOSIV N-Channel MOSFET, 5.8 A, 650 V, 3-Pin DPAK TK6P65W,RQ(S
- RS Stock No.:
- 133-2800
- Mfr. Part No.:
- TK6P65W,RQ(S
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP417.48
(exc. VAT)
PHP467.58
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 10 unit(s) shipping from December 29, 2025
- Plus 30 unit(s) shipping from January 05, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP41.748 | PHP417.48 |
| 50 - 90 | PHP40.496 | PHP404.96 |
| 100 - 490 | PHP39.282 | PHP392.82 |
| 500 - 990 | PHP38.104 | PHP381.04 |
| 1000 + | PHP36.961 | PHP369.61 |
*price indicative
- RS Stock No.:
- 133-2800
- Mfr. Part No.:
- TK6P65W,RQ(S
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.8 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | DTMOSIV | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.05 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 60 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Length | 6.6mm | |
| Typical Gate Charge @ Vgs | 11 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 6.1mm | |
| Height | 2.3mm | |
| Forward Diode Voltage | 1.7V | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.8 A | ||
Maximum Drain Source Voltage 650 V | ||
Series DTMOSIV | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.05 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 60 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 6.6mm | ||
Typical Gate Charge @ Vgs 11 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 6.1mm | ||
Height 2.3mm | ||
Forward Diode Voltage 1.7V | ||
- COO (Country of Origin):
- JP