MPN

Toshiba N-Channel MOSFET, 30.8 A, 600 V Enhancement, 5-Pin DFN TK31V60W5

Name: Toshiba N-Channel MOSFET, 30.8 A, 600 V Enhancement, 5-Pin DFN TK31V60W5
Brand: Toshiba
SKU: 171-2526
Availability: OutOfStock

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Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Toshiba
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30.8A
	Maximum Drain Source Voltage Vds	600V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	109mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	240W
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	105nC
	Forward Voltage Vf	-1.7V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	8mm
	Width	8mm
	Standards/Approvals	No
	Height	0.85mm
	Automotive Standard	No

	Select all
	Brand Toshiba
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30.8A
	Maximum Drain Source Voltage Vds 600V
	Package Type DFN
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 109mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 240W
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 105nC
	Forward Voltage Vf -1.7V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 8mm
	Width 8mm
	Standards/Approvals No
	Height 0.85mm
	Automotive Standard No

RoHS Status: Not Applicable

Switching Voltage Regulators

Fast reverse recovery time: trr = 135 ns (typ.)

Low drain-source on-resistance: RDS(ON) = 0.087 Ω(typ.)

Easy to control Gate switching

Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA)

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