Toshiba Type N-Channel MOSFET, 30.8 A, 600 V Enhancement, 5-Pin DFN TK31V60W5

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Subtotal (1 pack of 2 units)*

PHP843.25

(exc. VAT)

PHP944.44

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 8PHP421.625PHP843.25
10 - 98PHP392.085PHP784.17
100 - 498PHP367.11PHP734.22
500 - 998PHP345.465PHP690.93
1000 +PHP326.965PHP653.93

*price indicative

Packaging Options:
RS Stock No.:
171-2526
Mfr. Part No.:
TK31V60W5
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30.8A

Maximum Drain Source Voltage Vds

600V

Package Type

DFN

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

109mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

240W

Typical Gate Charge Qg @ Vgs

105nC

Forward Voltage Vf

-1.7V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

0.85mm

Length

8mm

Width

8 mm

Automotive Standard

No

RoHS Status: Exempt

COO (Country of Origin):
CN
Switching Voltage Regulators

Fast reverse recovery time: trr = 135 ns (typ.)

Low drain-source on-resistance: RDS(ON) = 0.087 Ω(typ.)

Easy to control Gate switching

Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA)

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