N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220SIS Toshiba TK31A60W,S4VX(M

RS Stock No.:: 891-2954
Mfr. Part No.:: TK31A60W,S4VX(M
Manufacturer:: Toshiba

N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220SIS Toshiba TK31A60W,S4VX(M

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 2)

PHP248.76

(exc. VAT)

PHP278.61

(inc. VAT)

48 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days

	Units	Per Unit	Per Pack*
	2 - 8	PHP248.76	PHP497.52
	10 - 48	PHP204.785	PHP409.57
	50 - 98	PHP188.22	PHP376.44
	100 - 198	PHP185.57	PHP371.14
	200 +	PHP182.915	PHP365.83
*price indicative

RS Stock No.:: 891-2954
Mfr. Part No.:: TK31A60W,S4VX(M
Manufacturer:: Toshiba

TK31A60W, Silicon N-Channel DTMOS MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	31 A
Maximum Drain Source Voltage	600 V
Package Type	TO-220SIS
Series	TK
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	88 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	45 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	10mm
Typical Gate Charge @ Vgs	86 nC @ 10 V
Width	4.5mm
Transistor Material	Si
Forward Diode Voltage	1.7V
Height	15mm

N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220SIS Toshiba TK31A60W,S4VX(M

MOSFET N-Channel, TK3x Series, Toshiba