Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin SO-8 SIRA06DP-T1-GE3

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Subtotal (1 tape of 5 units)*

PHP313.75

(exc. VAT)

PHP351.40

(inc. VAT)

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Units
Per Unit
Per Tape*
5 - 20PHP62.75PHP313.75
25 - 95PHP56.474PHP282.37
100 - 245PHP50.828PHP254.14
250 - 495PHP45.748PHP228.74
500 +PHP41.174PHP205.87

*price indicative

Packaging Options:
RS Stock No.:
787-9373
Mfr. Part No.:
SIRA06DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

51nC

Maximum Power Dissipation Pd

62.5W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.73V

Maximum Operating Temperature

150°C

Length

6.25mm

Height

1.12mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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