Vishay TrenchFET Type N-Channel MOSFET, 65 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SI7116BDN-T1-GE3

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Subtotal (1 pack of 10 units)*

PHP470.40

(exc. VAT)

PHP526.80

(inc. VAT)

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  • 6,000 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
10 - 40PHP47.04PHP470.40
50 - 90PHP45.629PHP456.29
100 - 240PHP42.892PHP428.92
250 - 990PHP39.032PHP390.32
1000 +PHP34.349PHP343.49

*price indicative

Packaging Options:
RS Stock No.:
228-2825
Mfr. Part No.:
SI7116BDN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.4mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

62.5W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

31.4nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

0.75mm

Automotive Standard

No

The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.

Very low Qg and Qoss reduce power loss and

improve efficiency

Optimized Qg, Qgd, and Qgd/Qgs ratio reduces

switching related power loss

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