Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

PHP75,204.00

(exc. VAT)

PHP84,228.00

(inc. VAT)

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Per Unit
Per Reel*
3000 +PHP25.068PHP75,204.00

*price indicative

RS Stock No.:
165-7074
Mfr. Part No.:
SIRA06DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

51nC

Maximum Power Dissipation Pd

62.5W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.73V

Maximum Operating Temperature

150°C

Width

5.26 mm

Height

1.12mm

Length

6.25mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


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