Vishay SiHG32N50D Type N-Channel MOSFET, 30 A, 500 V Enhancement, 3-Pin TO-247AC SiHG32N50D-GE3
- RS Stock No.:
- 787-9207
- Mfr. Part No.:
- SiHG32N50D-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP392.02
(exc. VAT)
PHP439.06
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 12 unit(s), ready to ship from another location
Units | Per Unit |
|---|---|
| 1 - 9 | PHP392.02 |
| 10 - 49 | PHP380.25 |
| 50 - 99 | PHP368.84 |
| 100 - 249 | PHP357.75 |
| 250 + | PHP347.03 |
*price indicative
- RS Stock No.:
- 787-9207
- Mfr. Part No.:
- SiHG32N50D-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | SiHG32N50D | |
| Package Type | TO-247AC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 390W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.87mm | |
| Height | 20.82mm | |
| Standards/Approvals | No | |
| Width | 5.31 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series SiHG32N50D | ||
Package Type TO-247AC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 390W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 15.87mm | ||
Height 20.82mm | ||
Standards/Approvals No | ||
Width 5.31 mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay SiHG20N50C Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-247AC
- Vishay SiHG20N50C Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-247AC SIHG20N50C-E3
- Vishay SIHG Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC
- Vishay Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-247AC SIHG25N40D-GE3
- Vishay SIHG Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247AC SIHG155N60EF-GE3
- Vishay SIHG Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3
- Vishay SIHG Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247