onsemi Isolated 2 Type P-Channel Power MOSFET, 4.1 A, 20 V Enhancement, 8-Pin ChipFET NTHD4102PT1G
- RS Stock No.:
- 780-0589
- Mfr. Part No.:
- NTHD4102PT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 25 units)*
PHP1,528.80
(exc. VAT)
PHP1,712.25
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 2,600 unit(s), ready to ship from another location
Units | Per Unit | Per Tape* |
|---|---|---|
| 25 - 25 | PHP61.152 | PHP1,528.80 |
| 50 - 100 | PHP59.317 | PHP1,482.93 |
| 125 - 225 | PHP57.538 | PHP1,438.45 |
| 250 - 475 | PHP55.812 | PHP1,395.30 |
| 500 + | PHP54.138 | PHP1,353.45 |
*price indicative
- RS Stock No.:
- 780-0589
- Mfr. Part No.:
- NTHD4102PT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | ChipFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.8V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 7.6nC | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Length | 3.1mm | |
| Width | 1.7 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type ChipFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.8V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 2.1W | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 7.6nC | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Length 3.1mm | ||
Width 1.7 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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