DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 4.1 A, 60 V Enhancement, 8-Pin SOIC DMN6070SSD-13
- RS Stock No.:
- 827-0493
- Mfr. Part No.:
- DMN6070SSD-13
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
PHP575.32
(exc. VAT)
PHP644.36
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 60 unit(s) shipping from June 08, 2026
- Plus 2,420 unit(s) shipping from June 15, 2026
- Plus 2,500 unit(s) shipping from October 28, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 80 | PHP28.766 | PHP575.32 |
| 100 - 180 | PHP27.904 | PHP558.08 |
| 200 - 480 | PHP26.23 | PHP524.60 |
| 500 - 980 | PHP23.87 | PHP477.40 |
| 1000 + | PHP21.006 | PHP420.12 |
*price indicative
- RS Stock No.:
- 827-0493
- Mfr. Part No.:
- DMN6070SSD-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.6nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 1.5W | |
| Forward Voltage Vf | 0.75V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Length | 4.95mm | |
| Height | 1.5mm | |
| Standards/Approvals | J-STD-020, AEC-Q101, RoHS, UL 94V-0, MIL-STD-202 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.6nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 1.5W | ||
Forward Voltage Vf 0.75V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Length 4.95mm | ||
Height 1.5mm | ||
Standards/Approvals J-STD-020, AEC-Q101, RoHS, UL 94V-0, MIL-STD-202 | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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