DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 4.1 A, 60 V Enhancement, 8-Pin SOIC

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Subtotal (1 reel of 2500 units)*

PHP35,855.00

(exc. VAT)

PHP40,157.50

(inc. VAT)

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Units
Per Unit
Per Reel*
2500 +PHP14.342PHP35,855.00

*price indicative

RS Stock No.:
169-7498
Mfr. Part No.:
DMN6070SSD-13
Manufacturer:
DiodesZetex
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Brand

DiodesZetex

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

4.1A

Maximum Drain Source Voltage Vds

60V

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.75V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.5W

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

5.6nC

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Standards/Approvals

J-STD-020, AEC-Q101, RoHS, UL 94V-0, MIL-STD-202

Length

4.95mm

Height

1.5mm

Width

3.95 mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

Dual N-Channel MOSFET, Diodes Inc.


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