Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Product Type	Power MOSFET
	Channel Type	Type P, Type N
	Maximum Continuous Drain Current Id	7A
	Maximum Drain Source Voltage Vds	30V
	Package Type	ECH
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	39mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.3W
	Forward Voltage Vf	0.79V
	Minimum Operating Temperature	150°C
	Typical Gate Charge Qg @ Vgs	11.8nC
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Height	0.9mm
	Standards/Approvals	No
	Width	2.3 mm
	Length	2.9mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type Power MOSFET
	Channel Type Type P, Type N
	Maximum Continuous Drain Current Id 7A
	Maximum Drain Source Voltage Vds 30V
	Package Type ECH
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 39mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.3W
	Forward Voltage Vf 0.79V
	Minimum Operating Temperature 150°C
	Typical Gate Charge Qg @ Vgs 11.8nC
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Height 0.9mm
	Standards/Approvals No
	Width 2.3 mm
	Length 2.9mm
	Number of Elements per Chip 2
	Automotive Standard No

Dual N/P-Channel MOSFET, ON Semiconductor

The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.

onsemi Isolated 2 Type P, Type N-Channel Power MOSFET, 7 A, 30 V Enhancement, 8-Pin ECH ECH8661-TL-H

Dual N/P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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