MPN

DiodesZetex Isolated 2 Type P, Type N-Channel Power MOSFET, 8.5 A, 30 V Enhancement, 8-Pin SOIC

RS Stock No.:: 122-0202
Mfr. Part No.:: DMC3021LSD-13
Manufacturer:: DiodesZetex

DiodesZetex Isolated 2 Type P, Type N-Channel Power MOSFET, 8.5 A, 30 V Enhancement, 8-Pin SOIC

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 2500 units)*

PHP37,242.50

(exc. VAT)

PHP41,712.50

(inc. VAT)

Stock information currently inaccessible

Units	Per Unit	Per Reel*
2500 - 2500	PHP14.897	PHP37,242.50
5000 - 7500	PHP14.754	PHP36,885.00
10000 - 22500	PHP14.418	PHP36,045.00
25000 - 47500	PHP14.131	PHP35,327.50
50000 +	PHP13.844	PHP34,610.00

*price indicative

RS Stock No.:: 122-0202
Mfr. Part No.:: DMC3021LSD-13
Manufacturer:: DiodesZetex

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Product Type	Power MOSFET
	Channel Type	Type P, Type N
	Maximum Continuous Drain Current Id	8.5A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	53mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.7V
	Maximum Power Dissipation Pd	2.5W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	150°C
	Typical Gate Charge Qg @ Vgs	7.8nC
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Isolated
	Standards/Approvals	AEC-Q101, RoHS, MIL-STD-202, J-STD-020, UL 94V-0
	Length	4.95mm
	Width	3.95 mm
	Height	1.5mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q200, AEC-Q100, AEC-Q101

	Select all
	Brand DiodesZetex
	Product Type Power MOSFET
	Channel Type Type P, Type N
	Maximum Continuous Drain Current Id 8.5A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 53mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.7V
	Maximum Power Dissipation Pd 2.5W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature 150°C
	Typical Gate Charge Qg @ Vgs 7.8nC
	Maximum Operating Temperature -55°C
	Transistor Configuration Isolated
	Standards/Approvals AEC-Q101, RoHS, MIL-STD-202, J-STD-020, UL 94V-0
	Length 4.95mm
	Width 3.95 mm
	Height 1.5mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101

COO (Country of Origin):: CN

DiodesZetex Isolated 2 Type P, Type N-Channel Power MOSFET, 8.5 A, 30 V Enhancement, 8-Pin SOIC

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