Toshiba N-Channel MOSFET, 7 A, 500 V, 3-Pin DPAK TK7P50D(T6RSS-Q)
- RS Stock No.:
- 756-3390
- Mfr. Part No.:
- TK7P50D(T6RSS-Q)
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 pack of 5 units)**
PHP261.36
(exc. VAT)
PHP292.73
(inc. VAT)
115 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP3,000.00 (ex VAT)
Real time qty checker
Units | Per Unit | Per Pack** |
---|---|---|
5 - 20 | PHP52.272 | PHP261.36 |
25 - 45 | PHP50.704 | PHP253.52 |
50 - 245 | PHP49.184 | PHP245.92 |
250 - 495 | PHP48.094 | PHP240.47 |
500 + | PHP47.05 | PHP235.25 |
**price indicative
- RS Stock No.:
- 756-3390
- Mfr. Part No.:
- TK7P50D(T6RSS-Q)
- Manufacturer:
- Toshiba
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Toshiba | |
Channel Type | N | |
Maximum Continuous Drain Current | 7 A | |
Maximum Drain Source Voltage | 500 V | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 1.22 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.4V | |
Maximum Power Dissipation | 100 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Length | 6.6mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
Width | 6.1mm | |
Height | 2.3mm | |
Select all | ||
---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 7 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.22 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.4V | ||
Maximum Power Dissipation 100 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 6.6mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Width 6.1mm | ||
Height 2.3mm | ||
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