Toshiba Type N-Channel MOSFET, 3 A, 500 V Enhancement, 3-Pin TO-252 TK3P50D,RQ(S
- RS Stock No.:
- 144-5226
- Mfr. Part No.:
- TK3P50D,RQ(S
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP506.66
(exc. VAT)
PHP567.46
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 440 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 80 | PHP25.333 | PHP506.66 |
| 100 - 180 | PHP24.573 | PHP491.46 |
| 200 - 980 | PHP23.836 | PHP476.72 |
| 1000 - 1980 | PHP23.121 | PHP462.42 |
| 2000 + | PHP22.428 | PHP448.56 |
*price indicative
- RS Stock No.:
- 144-5226
- Mfr. Part No.:
- TK3P50D,RQ(S
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-252 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Power Dissipation Pd | 60W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | -1.7V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.3mm | |
| Length | 6.6mm | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-252 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Power Dissipation Pd 60W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf -1.7V | ||
Maximum Operating Temperature 150°C | ||
Height 2.3mm | ||
Length 6.6mm | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Related links
- Toshiba Type N-Channel MOSFET 250 V EnhancementRQ(S
- Toshiba Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-252 TK7P50D(T6RSS-Q)
- Toshiba DTMOSIV Type N-Channel MOSFET 650 V EnhancementRQ(S
- Vishay Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-252 SIHD3N50D-GE3
- Toshiba Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Toshiba Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Toshiba Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Toshiba Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252