Toshiba Type N-Channel MOSFET, 8 A, 60 V Enhancement, 3-Pin TO-252 TK8S06K3L

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

PHP605.78

(exc. VAT)

PHP678.47

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 90 unit(s) ready to ship from another location
  • Plus 1,360 unit(s) shipping from January 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
10 - 40PHP60.578PHP605.78
50 - 90PHP58.76PHP587.60
100 - 990PHP56.998PHP569.98
1000 +PHP55.289PHP552.89

*price indicative

Packaging Options:
RS Stock No.:
171-2501
Mfr. Part No.:
TK8S06K3L
Manufacturer:
Toshiba
Find similar products by selecting one or more attributes.
Select all

Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

25W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

10nC

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

7 mm

Height

2.3mm

Length

6.5mm

Automotive Standard

AEC-Q101

RoHS Status: Exempt

COO (Country of Origin):
JP
Automotive

Motor Drivers

DC-DC Converters

Switching Voltage Regulators

Low drain-source on-resistance: RDS(ON) = 43 mΩ (typ.) (VGS = 10 V)

Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)

Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA

Related links