Toshiba Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-252 TK60S06K3L

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 5 units)*

PHP342.19

(exc. VAT)

PHP383.255

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 30 unit(s) ready to ship from another location
  • Plus 3,735 unit(s) shipping from January 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
5 - 45PHP68.438PHP342.19
50 - 95PHP59.86PHP299.30
100 - 995PHP53.23PHP266.15
1000 +PHP47.964PHP239.82

*price indicative

Packaging Options:
RS Stock No.:
171-2481
Mfr. Part No.:
TK60S06K3L
Manufacturer:
Toshiba
Find similar products by selecting one or more attributes.
Select all

Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

88W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

60nC

Maximum Operating Temperature

175°C

Height

2.3mm

Standards/Approvals

No

Length

6.5mm

Width

7 mm

Automotive Standard

AEC-Q101

RoHS Status: Not Applicable

COO (Country of Origin):
JP
Automotive

Motor Drivers

DC-DC Converters

Switching Voltage Regulators

Low drain-source on-resistance: RDS(ON) = 6.4 mΩ (typ.) (VGS = 10 V)

Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)

Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)

Related links