Toshiba Type P-Channel MOSFET, 8 A, 60 V Enhancement, 3-Pin TO-252 TJ8S06M3L

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 10 units)*

PHP608.92

(exc. VAT)

PHP681.99

(inc. VAT)

Add to Basket
Select or type quantity
Limited stock
  • 150 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
10 - 40PHP60.892PHP608.92
50 - 90PHP52.165PHP521.65
100 - 990PHP45.67PHP456.70
1000 +PHP40.544PHP405.44

*price indicative

Packaging Options:
RS Stock No.:
171-2492
Mfr. Part No.:
TJ8S06M3L
Manufacturer:
Toshiba
Find similar products by selecting one or more attributes.
Select all

Brand

Toshiba

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

27W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

10 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.5mm

Width

7 mm

Height

2.3mm

Automotive Standard

AEC-Q101

RoHS Status: Not Applicable

COO (Country of Origin):
JP
Applications

Automotive

Motor Drivers

DC-DC Converters

Switching Voltage Regulators

Features

Low drain-source on-resistance: RDS(ON) = 80 mΩ (typ.) (VGS = -10 V)

Low leakage current: IDSS = -10 μA (max) (VDS = -60V)

Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)

Related links