Toshiba Type P-Channel MOSFET, 60 A, 40 V Enhancement, 3-Pin TO-252 TJ60S04M3L

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Subtotal (1 pack of 5 units)*

PHP577.93

(exc. VAT)

PHP647.28

(inc. VAT)

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In Stock
  • 85 unit(s) ready to ship from another location
  • Plus 1,385 unit(s) shipping from January 02, 2026
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Units
Per Unit
Per Pack*
5 - 45PHP115.586PHP577.93
50 - 95PHP101.25PHP506.25
100 - 995PHP89.896PHP449.48
1000 +PHP80.938PHP404.69

*price indicative

Packaging Options:
RS Stock No.:
171-2485
Mfr. Part No.:
TJ60S04M3L
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

9.4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

10 V

Maximum Power Dissipation Pd

90W

Typical Gate Charge Qg @ Vgs

125nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

7 mm

Length

6.5mm

Height

2.3mm

Automotive Standard

AEC-Q101

RoHS Status: Not Applicable

COO (Country of Origin):
JP
Applications

Automotive

Motor Drivers

DC-DC Converters

Switching Voltage Regulators

Features

Low drain-source on-resistance: RDS(ON) = 7.0 mΩ (typ.) (VGS = -10 V)

Low leakage current: IDSS = -10 μA (max) (VDS = -40 V)

Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)

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