Infineon OptiMOS Type N-Channel MOSFET, 88 A, 200 V Enhancement, 3-Pin TO-263 IPB107N20N3GATMA1

This image is representative of the product range

Bulk discount available

Subtotal (1 unit)*

PHP309.70

(exc. VAT)

PHP346.86

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible
Units
Per Unit
1 - 9PHP309.70
10 - 49PHP303.50
50 - 99PHP281.57
100 - 249PHP226.11
250 +PHP191.37

*price indicative

Packaging Options:
RS Stock No.:
754-5434
Mfr. Part No.:
IPB107N20N3GATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

88A

Maximum Drain Source Voltage Vds

200V

Series

OptiMOS

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

65nC

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.31mm

Width

9.45 mm

Height

4.57mm

Automotive Standard

AEC-Q101

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links