Infineon OptiMOS 3 Type N-Channel MOSFET, 88 A, 200 V Enhancement, 3-Pin TO-220 IPP110N20N3GXKSA1
- RS Stock No.:
- 752-8381
- Mfr. Part No.:
- IPP110N20N3GXKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP277.02
(exc. VAT)
PHP310.26
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 116 unit(s) ready to ship from another location
- Plus 113 unit(s) shipping from January 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 9 | PHP277.02 |
| 10 - 49 | PHP268.71 |
| 50 - 99 | PHP260.66 |
| 100 - 249 | PHP252.83 |
| 250 + | PHP245.25 |
*price indicative
- RS Stock No.:
- 752-8381
- Mfr. Part No.:
- IPP110N20N3GXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 88A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | OptiMOS 3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.36mm | |
| Width | 4.57 mm | |
| Height | 9.45mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 88A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series OptiMOS 3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Operating Temperature 175°C | ||
Length 10.36mm | ||
Width 4.57 mm | ||
Height 9.45mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 IPB107N20N3GATMA1
- Infineon OptiMOS Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IPP320N20N3GXKSA1
- Infineon ISC Type N-Channel MOSFET 200 V Enhancement, 8-Pin PG-TSON-8 ISC130N20NM6ATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 IPB320N20N3GATMA1