Infineon OptiMOS Type N-Channel MOSFET, 6 A, 650 V Enhancement, 3-Pin

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Subtotal (1 pack of 2 units)*

PHP248.53

(exc. VAT)

PHP278.354

(inc. VAT)

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  • 1,000 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
2 - 48PHP124.265PHP248.53
50 - 98PHP120.535PHP241.07
100 - 248PHP113.305PHP226.61
250 - 498PHP103.11PHP206.22
500 +PHP90.73PHP181.46

*price indicative

RS Stock No.:
273-3000
Mfr. Part No.:
IPB65R660CFDAATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

650V

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.66Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

20nC

Maximum Power Dissipation Pd

62.5W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon 650V cool MOS CFDA super junction MOSFET is Infineon's second generation of market leading automotive qualified high voltage cool MOS power MOSFETs. In addition to the well known attributes of high quality and reliability required by the auto

Reduced EMI appearance and easy to design in

Better light load efficiency

Lower switching losses

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