Infineon OptiMOS Type N-Channel MOSFET, 100 A, 55 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 223-8512
- Mfr. Part No.:
- IPB100N06S2L05ATMA2
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 1000 units)*
PHP202,531.00
(exc. VAT)
PHP226,835.00
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 2,000 unit(s) shipping from August 31, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | PHP202.531 | PHP202,531.00 |
| 2000 - 2000 | PHP197.337 | PHP197,337.00 |
| 3000 + | PHP194.84 | PHP194,840.00 |
*price indicative
- RS Stock No.:
- 223-8512
- Mfr. Part No.:
- IPB100N06S2L05ATMA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-263 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 300W | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-263 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 300W | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS series N-channel MOSFET in D2-PAK package. It has benefits of highest current capability, lowest switching and conduction power losses for highest thermal efficiency and robust packages with superior quality and reliability.
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package
Ultra low Rds
100% Avalanche tested
Related links
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IPB100N06S2L05ATMA2
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IPB80N06S2L09ATMA2
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IPB80N06S2H5ATMA2
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IPD26N06S2L35ATMA2
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263 IPB100N04S204ATMA4