Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-263 IPD26N06S2L35ATMA2
- RS Stock No.:
- 223-8515
- Mfr. Part No.:
- IPD26N06S2L35ATMA2
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP727.16
(exc. VAT)
PHP814.42
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 3,480 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP36.358 | PHP727.16 |
| 40 - 80 | PHP33.304 | PHP666.08 |
| 100 - 220 | PHP30.789 | PHP615.78 |
| 240 - 480 | PHP28.573 | PHP571.46 |
| 500 + | PHP27.794 | PHP555.88 |
*price indicative
- RS Stock No.:
- 223-8515
- Mfr. Part No.:
- IPD26N06S2L35ATMA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | OptiMOS | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.95V | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series OptiMOS | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.95V | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS series N-channel MOSFET in DPAK package. It has benefits of highest current capability, lowest switching and conduction power losses for highest thermal efficiency and robust packages with superior quality and reliability.
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package
Ultra low Rds
100% Avalanche tested
Related links
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IPD30N06S2L13ATMA4
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IPD30N06S223ATMA2
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IPD30N06S215ATMA2
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IPB80N06S2L09ATMA2