Infineon OptiMOS Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-263 IPB80N06S2L09ATMA2

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Subtotal (1 pack of 10 units)*

PHP1,289.34

(exc. VAT)

PHP1,444.06

(inc. VAT)

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  • 3,000 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
10 - 10PHP128.934PHP1,289.34
20 - 90PHP118.199PHP1,181.99
100 - 240PHP109.077PHP1,090.77
250 - 490PHP101.295PHP1,012.95
500 +PHP98.478PHP984.78

*price indicative

Packaging Options:
RS Stock No.:
214-9026
Mfr. Part No.:
IPB80N06S2L09ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

55V

Series

OptiMOS

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.2mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. These are robust packages with superior quality and reliability.

The product is Automotive AEC Q101 qualified

100% Avalanche tested

It has 175°C operating temperature

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