STMicroelectronics Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-263 STB80NF55-06T4

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Subtotal (1 pack of 5 units)*

PHP1,030.69

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PHP1,154.375

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 45PHP206.138PHP1,030.69
50 - 95PHP199.954PHP999.77
100 - 245PHP193.952PHP969.76
250 - 495PHP188.128PHP940.64
500 +PHP182.486PHP912.43

*price indicative

Packaging Options:
RS Stock No.:
188-8527
Mfr. Part No.:
STB80NF55-06T4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

142nC

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

9.35 mm

Length

10.4mm

Height

4.37mm

Automotive Standard

No

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Exceptional dv/dt capability

Application oriented characterization

Applications

Switching application

Applications

Switching application

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