Infineon ISC Type N-Channel MOSFET, 88 A, 200 V Enhancement, 8-Pin PG-TSON-8 ISC130N20NM6ATMA1
- RS Stock No.:
- 349-148
- Mfr. Part No.:
- ISC130N20NM6ATMA1
- Manufacturer:
- Infineon
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PHP899.82
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 18 | PHP449.91 | PHP899.82 |
| 20 - 198 | PHP404.965 | PHP809.93 |
| 200 + | PHP373.545 | PHP747.09 |
*price indicative
- RS Stock No.:
- 349-148
- Mfr. Part No.:
- ISC130N20NM6ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 88A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | PG-TSON-8 | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Power Dissipation Pd | 242W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, J-STD-020, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 88A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type PG-TSON-8 | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Power Dissipation Pd 242W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, J-STD-020, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Infineon ISC Series MOSFET, 200V Drain Source Voltage, 88A Continuous Drain Current - ISC130N20NM6ATMA1
This MOSFET is a high-current N-channel switch designed for surface-mount power applications. It operates across a wide temperature span suitable for demanding environments and is intended for use where robust voltage handling and efficient conduction are required. The device is supplied in a compact PG-TSON-8 package for board-level mounting and complies with industry manufacturing standards.
Features and Benefits:
• 200V maximum drain voltage enables high-voltage switching
• 88A continuous drain current supports heavy load currents
• 13 mΩ low Rds(on) reduces conduction losses
• 242W power dissipation manages substantial thermal load
• 39 nC typical gate charge allows controlled switching energy
• ±20V gate tolerance protects gate from overdrive
• 88A continuous drain current supports heavy load currents
• 13 mΩ low Rds(on) reduces conduction losses
• 242W power dissipation manages substantial thermal load
• 39 nC typical gate charge allows controlled switching energy
• ±20V gate tolerance protects gate from overdrive
Applications
• Suitable for high-power DC-DC converters in industrial systems
• Ideal for motor-drive power stages requiring high current
• Used with battery-management systems in energy storage hardware
• Can be used for synchronous rectification in power supplies
• Suitable for fast-switching inverter circuits in power electronics
• Ideal for motor-drive power stages requiring high current
• Used with battery-management systems in energy storage hardware
• Can be used for synchronous rectification in power supplies
• Suitable for fast-switching inverter circuits in power electronics
What mounting method is required for board assembly?
It is intended for surface-mount assembly using the PG-TSON-8 footprint.
How does it behave across temperature extremes?
It is specified to operate from -55 °C up to 175 °C, supporting thermal margin in harsh conditions.
What standards govern its material and handling?
Manufacture and handling adhere to JEDEC and J-STD-020 provisions and RoHS restrictions.
What gate-drive constraints should designers observe?
The gate must be driven within ±20V to avoid exceeding gate-source limits.
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