Infineon IGLR65 Type N-Channel MOSFET, 9.2 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R200D2XUMA1
- RS Stock No.:
- 351-877
- Mfr. Part No.:
- IGLR65R200D2XUMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP780.25
(exc. VAT)
PHP873.90
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 5,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP156.05 | PHP780.25 |
| 50 - 95 | PHP148.196 | PHP740.98 |
| 100 - 495 | PHP137.374 | PHP686.87 |
| 500 - 995 | PHP126.376 | PHP631.88 |
| 1000 + | PHP121.664 | PHP608.32 |
*price indicative
- RS Stock No.:
- 351-877
- Mfr. Part No.:
- IGLR65R200D2XUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9.2A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TSON-8 | |
| Series | IGLR65 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.24Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Typical Gate Charge Qg @ Vgs | 1.26nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 34W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9.2A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TSON-8 | ||
Series IGLR65 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.24Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Typical Gate Charge Qg @ Vgs 1.26nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 34W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC for Industrial Applications | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.
650 V e-mode power transistor
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Low dynamic RDS(on)
High ESD robustness: 2 kV HBM - 1 kV CDM
Bottom-side cooled package
JEDEC qualified (JESD47, JESD22)
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