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    P-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC Vishay SI4435DDY-T1-GE3

    View all MOSFETs
    Bulk discount available

    Subtotal (1 pack of 10 units)**

    PHP420.03

    (exc. VAT)

    PHP470.43

    (inc. VAT)

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    1270 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Units
    Per Unit
    Per Pack**
    10 - 10PHP42.003PHP420.03
    20 - 40PHP40.745PHP407.45
    50 - 90PHP39.523PHP395.23
    100 - 190PHP38.337PHP383.37
    200 +PHP37.188PHP371.88

    **price indicative

    Packaging Options:
    RS Stock No.:
    710-3339
    Mfr. Part No.:
    SI4435DDY-T1-GE3
    Manufacturer:
    Vishay
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    Manufacturer

    Vishay

    Channel Type

    P

    Maximum Continuous Drain Current

    8.1 A

    Maximum Drain Source Voltage

    30 V

    Package Type

    SOIC

    Mounting Type

    Surface Mount

    Pin Count

    8

    Maximum Drain Source Resistance

    24 mΩ

    Channel Mode

    Enhancement

    Minimum Gate Threshold Voltage

    1V

    Maximum Power Dissipation

    2.5 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    -20 V, +20 V

    Length

    5mm

    Transistor Material

    Si

    Typical Gate Charge @ Vgs

    15 nC @ 4.5 V, 32 nC @ 10 V

    Number of Elements per Chip

    1

    Width

    4mm

    Maximum Operating Temperature

    +150 °C

    Minimum Operating Temperature

    -55 °C

    Height

    1.5mm

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