P-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC Vishay SI4435DDY-T1-GE3

RS Stock No.:: 710-3339
Mfr. Part No.:: SI4435DDY-T1-GE3
Manufacturer:: Vishay

P-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC Vishay SI4435DDY-T1-GE3

Bulk discount available

Subtotal (1 pack of 10 units)**

PHP420.03

(exc. VAT)

PHP470.43

(inc. VAT)

1270 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for over PHP7,000.00 (ex VAT)

Units	Per Unit	Per Pack**
10 - 10	PHP42.003	PHP420.03
20 - 40	PHP40.745	PHP407.45
50 - 90	PHP39.523	PHP395.23
100 - 190	PHP38.337	PHP383.37
200 +	PHP37.188	PHP371.88

**price indicative

RS Stock No.:: 710-3339
Mfr. Part No.:: SI4435DDY-T1-GE3
Manufacturer:: Vishay

Trans MOSFET P-CH 30V 8.1A N
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	8.1 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	24 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4mm
Transistor Material	Si
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	15 nC @ 4.5 V, 32 nC @ 10 V
Maximum Operating Temperature	+150 °C
Length	5mm
Minimum Operating Temperature	-55 °C
Height	1.5mm

P-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC Vishay SI4435DDY-T1-GE3

FREE delivery for over PHP7,000.00 (ex VAT)

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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