Vishay Si4435DDY Type P-Channel MOSFET, 8.1 A, 30 V Enhancement, 8-Pin SOIC
- RS Stock No.:
- 919-0288
- Mfr. Part No.:
- SI4435DDY-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2500 units)*
PHP55,860.00
(exc. VAT)
PHP62,562.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from August 17, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | PHP22.344 | PHP55,860.00 |
| 5000 - 5000 | PHP21.897 | PHP54,742.50 |
| 7500 - 12500 | PHP21.459 | PHP53,647.50 |
| 15000 - 20000 | PHP21.03 | PHP52,575.00 |
| 22500 + | PHP20.609 | PHP51,522.50 |
*price indicative
- RS Stock No.:
- 919-0288
- Mfr. Part No.:
- SI4435DDY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si4435DDY | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si4435DDY | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Width 4 mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Si4435DDY Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC SI4435DDY-T1-GE3
- Vishay Si4431CDY Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay Si4403CDY Type P-Channel MOSFET 20 V Enhancement, 8-Pin SOIC
- Vishay Isolated TrenchFET 2 Type P-Channel MOSFET 60 V Enhancement, 8-Pin SOIC
- Vishay Si9407BDY Type P-Channel TrenchFET Power MOSFET 60 V Enhancement, 8-Pin SOIC
- Vishay Isolated Si4599DY 2 Type N 6.8 A 8-Pin SOIC
- Vishay SQ Rugged Type P-Channel MOSFET 40 V Enhancement, 8-Pin SOIC
- Vishay Isolated TrenchFET 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC