P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay SI4431CDY-T1-GE3

RS Stock No.:: 812-3215
Mfr. Part No.:: SI4431CDY-T1-GE3
Manufacturer:: Vishay

P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay SI4431CDY-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 20 units)**

PHP655.50

(exc. VAT)

PHP734.16

(inc. VAT)

40 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for over PHP7,000.00 (ex VAT)

Units	Per Unit	Per Pack**
20 - 20	PHP32.775	PHP655.50
40 - 80	PHP31.792	PHP635.84
100 - 180	PHP30.839	PHP616.78
200 - 380	PHP29.913	PHP598.26
400 +	PHP29.015	PHP580.30

**price indicative

RS Stock No.:: 812-3215
Mfr. Part No.:: SI4431CDY-T1-GE3
Manufacturer:: Vishay

Si4431CDY, P-Channel 30V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	7.2 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	49 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	4.2 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Length	5mm
Number of Elements per Chip	1
Transistor Material	Si
Width	4mm
Typical Gate Charge @ Vgs	25 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	1.55mm

P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay SI4431CDY-T1-GE3

FREE delivery for over PHP7,000.00 (ex VAT)

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

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