Vishay Si4431CDY Type P-Channel MOSFET, 7.2 A, 30 V Enhancement, 8-Pin SOIC SI4431CDY-T1-GE3
- RS Stock No.:
- 812-3215
- Mfr. Part No.:
- SI4431CDY-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP942.22
(exc. VAT)
PHP1,055.28
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 180 unit(s) shipping from March 23, 2026
- Plus 460 unit(s) shipping from March 30, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP47.111 | PHP942.22 |
| 40 - 80 | PHP45.697 | PHP913.94 |
| 100 - 180 | PHP44.328 | PHP886.56 |
| 200 - 380 | PHP42.998 | PHP859.96 |
| 400 + | PHP41.707 | PHP834.14 |
*price indicative
- RS Stock No.:
- 812-3215
- Mfr. Part No.:
- SI4431CDY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 7.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si4431CDY | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 49mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -0.71V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 4.2W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.55mm | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 7.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si4431CDY | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 49mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -0.71V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 4.2W | ||
Maximum Operating Temperature 150°C | ||
Height 1.55mm | ||
Width 4 mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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