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Infineon HEXFET Type N-Channel MOSFET, 290 A, 100 V Enhancement, 3-Pin TO-247 IRFP4468PBF

RS Stock No.:: 688-7014
Mfr. Part No.:: IRFP4468PBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 290 A, 100 V Enhancement, 3-Pin TO-247 IRFP4468PBF

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Subtotal (1 unit)*

PHP277.40

(exc. VAT)

PHP310.69

(inc. VAT)

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In Stock

192 unit(s) ready to ship from another location
Plus 1,759 unit(s) shipping from January 01, 2026

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Units	Per Unit
1 - 9	PHP277.40
10 - 49	PHP269.09
50 - 99	PHP261.02
100 - 249	PHP253.18
250 +	PHP245.58

*price indicative

RS Stock No.:: 688-7014
Mfr. Part No.:: IRFP4468PBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	290A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-247
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	360nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	520W
	Maximum Operating Temperature	175°C
	Length	15.87mm
	Standards/Approvals	No
	Width	5.31 mm
	Height	20.7mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 290A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-247
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 360nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 520W
	Maximum Operating Temperature 175°C
	Length 15.87mm
	Standards/Approvals No
	Width 5.31 mm
	Height 20.7mm
	Automotive Standard No

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