Infineon HEXFET Type N-Channel MOSFET, 42 A, 100 V Enhancement, 3-Pin TO-247

RS Stock No.:: 919-4873
Mfr. Part No.:: IRFP150NPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 42 A, 100 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 25 units)*

PHP2,071.00

(exc. VAT)

PHP2,319.50

(inc. VAT)

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In Stock

600 unit(s) ready to ship from another location

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Units	Per Unit	Per Tube*
25 - 25	PHP82.84	PHP2,071.00
50 - 75	PHP80.355	PHP2,008.88
100 - 225	PHP77.944	PHP1,948.60
250 - 475	PHP75.606	PHP1,890.15
500 +	PHP73.338	PHP1,833.45

*price indicative

RS Stock No.:: 919-4873
Mfr. Part No.:: IRFP150NPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	42A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-247
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	36mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	160W
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	110nC
	Maximum Operating Temperature	175°C
	Height	20.3mm
	Standards/Approvals	No
	Width	5.3 mm
	Length	15.9mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 42A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-247
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 36mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 160W
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 110nC
	Maximum Operating Temperature 175°C
	Height 20.3mm
	Standards/Approvals No
	Width 5.3 mm
	Length 15.9mm
	Automotive Standard No

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 42A Maximum Continuous Drain Current, 160W Maximum Power Dissipation - IRFP150NPBF

This MOSFET is designed for high-performance applications that require efficient switching. With its N-channel configuration, it effectively manages substantial power loads, making it a key component in various electronic circuits and power management systems. Its ability to function across a wide temperature range increases its adaptability in various environments.

Features & Benefits

• Maximum continuous drain current of 42A

• Maximum drain-source voltage of 100V

• Low Rds(on) of 36mΩ for enhanced efficiency

• Maximum power dissipation of 160W

• Utilises enhancement mode for improved operation

• Integrated in a TO-247AC package for straightforward mounting

Applications

• Utilised in power supply circuits for automation devices

• Suitable for motor control in industrial machinery

• Employed in renewable energy systems for effective power conversion

• Applicable for high-frequency switching in telecommunications

Can it be used in high-temperature environments?

Yes, it operates effectively at temperatures up to +175°C, permitting use in challenging conditions.

What is the maximum gate-source voltage it can handle?

The device is designed to handle a maximum gate-source voltage of -20V and +20V, providing varied options for circuit design.

How does the low Rds(on) benefit performance?

A low Rds(on) minimises power losses during operation, thus enhancing overall efficiency and thermal management.

Is it suitable for through-hole mounting?

Yes, the TO-247AC package is specifically intended for through-hole mounting applications.

What considerations should be taken during installation?

Ensure the device is adequately cooled during operation to maintain optimal performance and prevent overheating.