Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V Enhancement, 3-Pin TO-247

RS Stock No.:: 919-4918
Mfr. Part No.:: IRFP3710PBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 25 units)*

PHP2,299.00

(exc. VAT)

PHP2,575.00

(inc. VAT)

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In Stock

625 unit(s) ready to ship from another location

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Units	Per Unit	Per Tube*
25 - 25	PHP91.96	PHP2,299.00
50 - 75	PHP89.201	PHP2,230.03
100 - 225	PHP86.525	PHP2,163.13
250 - 475	PHP83.929	PHP2,098.23
500 +	PHP81.411	PHP2,035.28

*price indicative

RS Stock No.:: 919-4918
Mfr. Part No.:: IRFP3710PBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	57A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-247
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	25mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	190nC
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	200W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Height	20.3mm
	Width	5.3 mm
	Standards/Approvals	No
	Length	15.9mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 57A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-247
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 25mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 190nC
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 200W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Height 20.3mm
	Width 5.3 mm
	Standards/Approvals No
	Length 15.9mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 57A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRFP3710PBF

This MOSFET is designed for efficient power management in a variety of electronic applications. It features an N-channel configuration and handles high continuous drain current, ensuring effective performance even at elevated temperatures and exhibiting low on-resistance, making it suitable for industrial environments.

Features & Benefits

• High continuous drain current capability supports strong performance

• Maximum drain-source voltage of 100V increases versatility

• Low RDS(on) of 25mΩ minimises energy loss during operation

• High power dissipation capacity of 200W enables effective energy management

• Enhancement mode transistor allows for control over switching operations

• TO-247AC package facilitates easy integration in through-hole applications

Applications

• Ideal for power supply circuits

• Commonly found in motor control systems

• Suitable for automotive power management solutions

• Utilised in battery management systems

What is the maximum temperature for this device to operate?

The maximum operating temperature reaches up to +175°C, allowing efficient function in high-temperature environments.

How does this device handle high currents?

It supports a continuous drain current of 57A, enabling it to power high-demand applications without failure.

Can it be used in a through-hole design?

Yes, the TO-247AC package allows for through-hole mounting, simplifying integration into various circuit boards.

What kind of load can this MOSFET switch?

This device can manage significant loads due to its high power dissipation of 200W, suitable for heavy-duty applications.

Is it compatible with standard gate voltages?

Yes, it operates effectively with a gate threshold voltage between 2V and 4V, ensuring compatibility with various drive circuits.