Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-263
- RS Stock No.:
- 218-3095
- Mfr. Part No.:
- IRF3710STRLPBF
- Manufacturer:
- Infineon
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Subtotal (1 reel of 800 units)*
PHP65,968.00
(exc. VAT)
PHP73,888.00
(inc. VAT)
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In Stock
- Plus 4,000 unit(s) shipping from May 18, 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 800 - 800 | PHP82.46 | PHP65,968.00 |
| 1600 - 1600 | PHP79.162 | PHP63,329.60 |
| 2400 + | PHP77.105 | PHP61,684.00 |
*price indicative
- RS Stock No.:
- 218-3095
- Mfr. Part No.:
- IRF3710STRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 86.7nC | |
| Maximum Power Dissipation Pd | 3.8W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Standards/Approvals | EIA 418 | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 86.7nC | ||
Maximum Power Dissipation Pd 3.8W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Standards/Approvals EIA 418 | ||
Length 10.67mm | ||
Automotive Standard No | ||
The Infineon HEXFET series N-channel power MOSFET. The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Lead-Free
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